Physics · Semiconductors, semiconductor diode: I-V characteristics in forward and reverse bias, diode as a rectifier
In which of the following doped semiconductors majority of charge carriers are h
In which of the following doped semiconductors majority of charge carriers are holes?
- A. Antimony doped with germanium
- B. Boron doped with silicon
- C. Arsenic doped with silicon
- D. Phosphorus doped with germanium
Step-by-step solution
Boron is a trivalent element (3 valence electrons). When doped into tetravalent silicon (4 valence electrons), it creates an excess of holes (positive charge carriers) in the crystal, resulting in p-type semiconductor where holes are the majority charge carriers. Options A, C, and D involve pentavalent dopants (antimony, arsenic, phosphorus) which donate extra electrons, forming n-type semiconductors with electrons as majority carriers.